Carbon-Doped InP-based HBTs
Source: Kopin Corporation
The carbon-doped Indium Phosphide (InP)-based HBTs are considered a keystone technology for components used in wireless and high-speed optical communication...
The carbon-doped Indium Phosphide (InP)-based HBTs are considered a keystone technology for components used in wireless and high-speed optical communication. Compared to GaAs HBTs, InP, HBTs demonstrate superior speed, operating voltage, power efficiency and thermal properties. This enables a new generation of high-performance, reliable, cost-effective InP HBT circuits for a wide variety of applications, including 40-gigabit per second (Gb/s) fiber optic circuits (OC 768) and efficient power amplifiers for third-generation wireless phones.
Kopin Corporation, 695 Myles Standish Blvd, Taunton, MA 02780. Tel: 508-8246696; Fax: 508-822-1381.
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