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Research Report: Multiport RF Switch ICs and Modules

NTT Science and Core Technology Laboratory Group

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Description

Multiport electrical switch IC/modules using InP HEMTs suitable for high-speed (10 or 40 Gbit/s) and micro-/millimeter-wave applications have been developed. The switches are classified as cold-FET switches, so they are analog switches with almost zero power dissipation. By using the InP HEMTs with novel circuit configurations, we can make a much larger capacity switch with higher bandwidth/ch and/or larger port counts compared to a switch using conventional Si- or GaAs-based FETs. Potential applications are high-speed signal routing and/or distribution, measurement systems such as combination of multiple packets, and millimeter-wave multiport switches. You will find new solutions using the unique features of the 1x2-1x8 and 2x2-8x8 switch IC/module families.